Rated Output Power
120W + 120W (80, 20H2~20kHz
0.005% T-H-D) (R, E)
170W + 170W (40, 20Hz-20kHz
0.01% T-H-D) (R, E)
100W + 100W (85, 20Hz~20kHz
0.005% T-H-D) (G, B, A)
Power Band Width
10Hz~ 100kHz
(82, GOW, 0.02% T-H:D)
(К, E)
(82, SOW, 0.0296 T-H-D)
(G, B, A)
Damping Factor
200 (8, 1kHz)
100 (482, 1kHz)
Input Sensitivity /Impedance
1V (100W/812)/25kX?, БООРЕ
Frequency Response
MODE "рс"
80, 60W (R,E) - 5OW (G,B,A)
10Hz
:
008
1kHz
:
ООВ
100kHz
:
—0.7x0.5dB
MODE "ርር"
80, GOW (R,E) - 50W (G,B,A)
10Hz
:
—1.520.5dB
1КН2
:
бав
100kHz
:
—0.7+0.5dB
Signal-to- Noise Ratio
118dB (IHF-A Network, RL=8Q,
1k& terminated at Input terminal)
Residual Noise
32uV (82, ІНЕ-А Network,
Input VR min.)
SPECIFICATIONS
Harmonic Distortion
Less than 0.005%
(82, 10Hz~20kHz, 60W)
(R, E)
(82, 10Hz~20kHz, 50W)
(G,B,A)
Less than 0,02%
(82, 100kHz, GOW) (R, E)
(89, 100kHz, 50W) (С, B, A)
IM Distortion (EIAJ, IHF, DIN)
Less than 0,002%
(843, 50Hz : 7kHz-4: 1, GOW)
(R,E)
(843, 50Hz: 7kHz=4:1, 50W)
(G, B, A)
Channel Separation (L > В, В > Е}
90dB (82, 1kHz, GOW) (В, E)
(853, 1kHz, 50W) (С, B, A)
тоав (82, 20kHz, GOW) (В, E)
(8Q, 20kHz, 50W) (С, B, A)
Filter Characteristics
MODE
"AC"
Peak Indicator
fc = 6,4Н2, —6dB/oct (Low Cut Filter)
OdB-100W (82, 1kHz)
OdB~—45dB
(—5dB step)
100y sec.
1.2 sec. (—45dB <> 008)
Indicator Point
Indicator Level
Attack Time
Release Time
Qverload indicator
196 Distortion
(853, 10Н2~20КН2)
Indicator L evel
Number of Semiconductors Used
|
77 (Transistors)
4 (Dual Transistors)
3 (1Cs)
2 (Dual FETs)
32 (Diodes), 2 (Dual Diodes)
2 (Bridged Diodes)
6 (Zener Diodes)
24 (Green LEDs)
4 (Red LEDs)
Rated Voltage
E
:
220/240V AC, 60Hz
R
:
110/120V/220/240V AC,
50/60Hz
G
:
220V АС, 50Hz
В, А
:
240V АС, 50Hz
Rated Power Consumption
R
:
350W
B
:
500W
G,A
>
450W
E
:
900W
AC Outlet
100W Unswitched
x 1
(R only)
Dimensions
W: 435, H: 145.5, D: 374.5 mm
(17-1/8") x (5-3/4") x [14-3/4')
Weight
18.5kg (40.8 Ibs)
Specifications subject to change without notice.
R: GENERAL
A: AUSTRALIAN
E: EUROPEAN,
G: NORTH
EUROPEAN,
B: BRITISH